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 1N5223B through 1N5258B
Silicon Epitaxial Planar Zener Diodes for Voltage Regulation
REJ03G1222-0300 (Previous: ADE-208-137B) Rev.3.00 Aug 22, 2005
Features
* Glass package DO-35 structure ensures high reliability. * Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application.
Ordering Information
Type No. 1N5223B through 1N5258B Cathode Band Black Mark Type No. Package Name DO-35 Package Code (Previous Code) GRZZ0002ZB-A (DO-35)
Pin Arrangement
1 Type No. Cathode band
2
1. Cathode 2. Anode
Rev.3.00 Aug 22, 2005 page 1 of 5
1N5223B through 1N5258B
Absolute Maximum Ratings
(Ta = 25C)
Item Power dissipation Surge power dissipation Lead temperature Junction temperature Storage temperature Symbol Pd Pd (surge) * 2 TL * Tj * Tstg
3 1
Ratings 500 10 230 200 -65 to +200
Unit mW W C C C
Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55C, Tj is prior to surge. 2. Less than 1/16" from the case for 10 seconds. 3. By standard printed board, see fig 2.
Electrical Characteristics
(Ta = 25C)
Zener Voltage Test Condition Type No. 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B VZ (V) 2.7 5 (%) 2.8 5 (%) 3.0 5 (%) 3.3 5 (%) 3.6 5 (%) 3.9 5 (%) 4.3 5 (%) 4.7 5 (%) 5.1 5 (%) 5.6 5 (%) 6.0 5 (%) 6.2 5 (%) 6.8 5 (%) 7.5 5 (%) 8.2 5 (%) 8.7 5 (%) 9.1 5 (%) 10 5 (%) 11 5 (%) 12 5 (%) 13 5 (%) 14 5 (%) 15 5 (%) 16 5 (%) 17 5 (%) 18 5 (%) 19 5 (%) 20 5 (%) IZ (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 Reverse Current IR (A) Max 75 75 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Test Condition VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.5 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 ZZT () Max 30 30 29 28 24 23 22 19 17 11 7 7 5 6 8 8 10 17 22 30 13 15 16 17 19 21 23 25 Dynamic Resistance Test Condition IZT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 ZZK () Max 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 Test Condition IZK (mA) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Z (%/C) *1 Max -0.08 -0.08 -0.075 -0.07 -0.065 -0.06 0.055 0.03 0.03 +0.038 +0.038 +0.045 +0.05 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 VF*2 (V) Max 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1
Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25C to 125C 2. Tested with DC, IF = 200 mA
Rev.3.00 Aug 22, 2005 page 2 of 5
1N5223B through 1N5258B
Electrical Characteristics (cont.)
(Ta = 25C)
Zener Voltage Test Condition Type No. 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B VZ (V) 22 5 (%) 24 5 (%) 25 5 (%) 27 5 (%) 28 5 (%) 30 5 (%) 33 5 (%) 36 5 (%) IZ (mA) 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 Reverse Current IR (A) Max 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Test Condition VR (V) 17 18 19 21 21 23 25 27 ZZT () Max 29 33 35 41 44 49 58 70 Dynamic Resistance Test Condition IZT (mA) 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 ZZK () Max 600 600 600 600 600 600 700 700 Test Condition IZK (mA) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Z (%/C) *1 Max +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 VF*2 (V) Max 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.1
Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25C to 125C 2. Tested with DC, IF = 200 mA
Rev.3.00 Aug 22, 2005 page 3 of 5
1N5223B through 1N5258B
Main Characteristic
1N5225B 1N5227B 1N5229B 1N5231B 1N5233B 1N5235B 1N5237B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B
25
1N525
20
Zener Current IZ (mA)
1N5250B
15
1N5223B
1N52 56 B 57B 1N52
54 B
B
B
55B
3B
1N5252
1N5251
1N52
1N52
5
0 0
4
8
12
16
20
24
28
32
36
1N5
258
10
B
40
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 500
Power Dissipation Pd (mW)
400
300
200
5mm 2.5mm
100
3mm
0 0
Printed circuit board 100 x 180 x 1.6t mm Material: paper phenol
50
100
150
200
Ambient Temperature Ta (C) Fig.2 Power Dissipation vs. Ambient Temperature
Rev.3.00 Aug 22, 2005 page 4 of 5
1N5223B through 1N5258B
Package Dimensions
JEITA Package Code SC-40 RENESAS Code GRZZ0002ZB-A Previous Code DO-35 / DO-35V MASS[Typ.] 0.13g
L
E
L
b
D
Reference
Dimension in Millimeters
Symbol
b D E L
Min 26.0
Nom 0.5 2.0 -
Max 4.2 -
Rev.3.00 Aug 22, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0


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